2SD1766 transistor (npn) features power dissipation p cm : 0.5 w (tamb=25 ) collector current i cm : 2 a collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 50 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 32 v emitter-base breakdown voltage v (br)ebo i e = 50 a, i c =0 5 v collector cut-off current i cbo v cb = 20 v, i e =0 1 a emitter cut-off current i ebo v eb = 4 v, i c =0 1 a dc current gain h fe(1) v ce =3v, i c = 500 ma 82 390 collector-emitter saturation voltage v ce(sat) i c = 2 a, i b = 0.2 a 0.8 v transition frequency f t v ce = 5 v, i c = 50 ma, f= 100 mhz 100 mhz collector output capacitance c ob v cb = 10 v, i e =0, f= 1 mhz 30 pf classification of h fe(1) rank p q r range 82-180 120-270 180-390 marking dbp dbq dbr sot-89 1. base 2. collector 3. emitter 1 2 3 2SD1766 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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